Role of resident electrons in the manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures

The spin-memory effect in the GaAs / InGaAs heterostructures with $\delta$ layer barrier have been investigated. consists spin polarization of Mn atoms due to interaction photogenerated spin-polarized holes. investigation was carried out by analyzing probe photoluminescence pulse pump-probe technique. It shown that circular degree generated is strongly affected hole spins polarized pump pulse. latter leads decrease as compared single excitation ($\delta P$ effect). amplitude $\delta P$-effect most concentration resident electrons quantum well which believed be specific compliance selection rules for optical transition participation unpolarized electrons. rest sample's parameters including spatial separation between and ($d_s$) a minor on value paradoxical situation decreasing $d_s$. proposed experimental technique consisting creating significant QW may serve reliable method determining strength this relaxation time particular nanostructure.